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Register a new userTheory of Electromotive Force Induced by Domain Wall Motion
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We formulate a theory on the dynamics of conduction electrons in the presence of moving magnetic textures in ferromagnetic materials. We show that the variation of local magnetization in both space and time gives rise to topological fields, which induce electromotive forces on the electrons. Universal results are obtained for the emf induced by both transverse and vortex domain walls traveling in a magnetic film strip, and their measurement may provide clear characterization on the motion of such walls.
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Topological defects such as magnetic solitons, vortices, Bloch lines, and skyrmions have started to play an important role in modern magnetism because of their extraordinary stability, which can be exploited in the production of memory devices. Recently, a novel type of antisymmetric exchange interaction, namely the Dzyaloshinskii-Moriya interaction (DMI), has been uncovered and found to influence the formation of topological defects. Exploring how the DMI affects the dynamics of topological defects is therefore an important task. Here we investigate the dynamic domain wall (DW) under a strong DMI and find that the DMI induces an annihilation of topological vertical Bloch lines (VBLs) by lifting the four-fold degeneracy of the VBL. As a result, velocity reduction originating from the Walker breakdown is completely suppressed, leading to a soliton-like constant velocity of the DW. Furthermore, the strength of the DMI, which is the key factor for soliton-like DW motion, can be quantified without any side effects possibly arising from current-induced torques or extrinsic pinnings in magnetic films. Our results therefore shed light on the physics of dynamic topological defects, which paves the way for future work in topology-based memory applications.
Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.
We investigated the aspect ratio (thickness/width) dependence of the threshold current density required for the current-driven domain wall (DW) motion for the Ni81Fe19 nanowires. It has been shown theoretically that the threshold current density is proportional to the product of the hard-axis magnetic anisotropy Kperp and the DW width lamda. (Phys. Rev. Lett. 92, 086601 (2004).) We show experimentally that Kperp can be controlled by the magnetic shape anisotropy in the case of the Ni81Fe19 nanowires, and that the threshold current density increases with an increase of Kperp*l. We succeeded to reduce the threshold current density by half by the shape control.
Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10 multilayers a transition from excess to suppressed domain-wall induced 1/f noise above current densities of j_c ~ 2*10^5 A/cm^2 has been observed. In ferromagnetic Co line structures the domain wall related noise remains qualitatively unchanged up to current densities exceeding 10^6A/cm^2. Theoretical estimates of the critical current density for a synthetic Fe/Cr antiferromagnet suggest that this effect may be attributed to current-induced domain-wall motion that occurs via spin transfer torques.
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare earth-transition metal alloy bilayers, we experimentally studied current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum close to the angular momentum compensation. With experiment and modelling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy metal/ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.
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