No Arabic abstract
The effects of isolated residual-gas adsorbates on the local electronic structure of the Dy(0001) surface were spatially mapped by scanning tunneling microscopy and spectroscopy at 12 K. Less than 15 A away from an adsorbate, a strong reduction of the intensity and a significant increase of the width of the majority component of the surface state due to impurity scattering were observed, with essentially no change of the minority component; this reflects a high lateral localization of the Tamm-like surface state. Furthermore, an adsorbate-induced state was found that behaves metastable.
Low-temperature scanning tunneling spectroscopy is used to study electronic structure and dynamics of d-like surface states of trivalent lanthanide metals from La to Lu. The magnetic exchange splitting of these states is found to scale with the 4f spin multiplied by an effective exchange-coupling constant that increases with 4f occupancy in an approximately linear way. The dynamics of the surfaces states, as revealed by the lifetime width, is dominated by electron-phonon scattering in the occupied region and by electron-magnon scattering in the unoccupied region, respectively.
The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The results indicated that the 4f-related energy levels remain outside the bandgap in both materials, in good agreement with a recent phenomenological model, based on experimental data. Additionally, zinc oxide doped with lanthanide impurities became an n-type material, showing a coupling between the 4f-related spin polarized states and the carriers. This coupling may generate spin polarized currents, which could lead to applications in spintronic devices.
We present a comprehensive theoretical investigation of the electron-phonon contribution to the lifetime broadening of the surface states on Cu(111) and Ag(111), in comparison with high-resolution photoemission results. The calculations, including electron and phonon states of the bulk and the surface, resolve the relative importance of the Rayleigh mode, being dominant for the lifetime at small hole binding energies. Including the electron-electron interaction, the theoretical results are in excellent agreement with the measured binding energy and temperature dependent lifetime broadening.
We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM = Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn1-xTMxO, the localized TM2+ configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy eF close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with eF close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.