A possible connection between extremely large magneto-resistance and the presence of Weyl points has garnered much attention in the study of topological semimetals. Exploration of these concepts in transition metal phosphide WP2 has been complicated by conflicting experimental reports. Here we combine angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to disentangle surface and bulk contributions to the ARPES intensity, the superposition of which has plagued the determination of the electronic structure in WP2. Our results show that while the hole- and electron-like Fermi surface sheets originating from surface states have different areas, the bulk-band structure of WP2 is electron-hole-compensated in agreement with DFT. Furthermore, the detailed band structure is compatible with the presence of at least 4 temperature-independent Weyl points, confirming the topological nature of WP2 and its stability against lattice distortions.
Weyl points, serving as monopoles in the momentum space and laying the foundation of topological gapless phases, have recently been experimentally demonstrated in various physical systems. However, none of the observed Weyl degeneracies are ideal: they either offset in energy or coexist with trivial dispersions at other momenta. The lack of an ideal Weyl system sets a serious limit to the further development of Weyl physics and potential applications. Here, by constructing a photonic metamaterial, we experimentally observe an ideal Weyl system, whose nodal frequencies are pinned by symmetries to exactly the same value. Benefitting from the ideal Weyl nodes, we are able to map out the complete evolution of the helicoid surface states spinning around the projections of each Weyl nodes. Our discovery provides an ideal photonic platform for Weyl systems and novel topological devices.
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 have recently sparked interest for exhibiting giant magnetoresistance. While the exact nature of magnetoresistance in these materials is still under active investigation, there are experimental results indicating anisotropic negative magnetoresistance. We study the effect of magnetic field on the band structure topology of these materials by applying a Zeeman splitting. In the absence of magnetic field, we find that the materials are weak topological insulators, which is in agreement with previous studies. When the magnetic field is applied, we find that type-II Weyl points form. This result is found first from a symmetry argument, and then numerically for a k.p model of TaAs2 and a tight-binding model of NbSb2. This effect can be of help in search for an explanation of the anomalous magnetoresistance in these materials.
We study the occurrence of symmetry-enforced topological band crossings in tetragonal crystals with strong spin-orbit coupling. By computing the momentum dependence of the symmetry eigenvalues and the global band topology in the entire Brillouin zone, we determine all symmetry-enforced band crossings in tetragonal space groups. In particular, we classify all Dirac and Weyl degeneracies on points, lines, and planes, and find a rich variety of topological degeneracies. This includes, among others, double Weyl points, fourfold-double Weyl points, fourfold-quadruple Weyl points, Weyl and Dirac nodal lines, as well as topological nodal planes. For the space groups with symmetry-enforced Weyl points, we determine the minimal number of Weyl points for a given band pair and, remarkably, find that materials in space groups 119 and 120 can have band pairs with only two Weyl points in the entire Brillouin zone. This simplifies the topological responses, which would be useful for device applications. Using the classification of symmetry-enforced band crossings, we perform an extensive database search for candidate materials with tetragonal space groups. Notably, we find that Ba$_5$In$_4$Bi$_5$ and NaSn$_5$ exhibit twofold and fourfold Weyl nodal lines, respectively, which cross the Fermi energy. Hf$_3$Sb and Cs$_2$Tl$_3$ have band pairs with few number of Weyl points near the Fermi energy. Furthermore, we show that Ba$_3$Sn$_2$ has Weyl points with an accordion dispersion and topological nodal planes, while AuBr and Tl$_4$PbSe$_3$ possess Dirac points with hourglass dispersions. For each of these candidate materials we present the ab-initio band structures and discuss possible experimental signatures of the nontrivial band topology.