Do you want to publish a course? Click here

Sub-Poissonian phononic population in a nanoelectromechanical system

233   0   0.0 ( 0 )
 Added by Matteo Merlo
 Publication date 2007
  fields Physics
and research's language is English




Ask ChatGPT about the research

Population of a phononic mode coupled to a single-electron transistor in the sequential tunneling regime is discussed for the experimentally realistic case of intermediate electron-phonon coupling. Features like a sub-Poissonian bosonic distribution are found in regimes where electron transport drives the oscillator strongly out of equilibrium with only few phonon states selectively populated. The electron Fano factor is compared to fluctuations in the phonon distribution, showing that all possible combinations of sub- and super-Poissonian character can be realized.



rate research

Read More

We investigate qubit lasing in the strong coupling limit. The qubit is given by a Cooper-pair box, and population inversion is established by an additional third state, which can be addressed via quasiparticle tunneling. The coupling strength between oscillator and qubit is assumed to be much higher than the quasiparticle tunneling rate. We find that the photon number distribution is sub-Poissonian in this strong coupling limit.
We report on high frequency resolution coherent nonlinear optical spectroscopy on an ensemble of InGaN disks in GaN nanowires at 300 K. Sub-$mu$eV resonances in the inhomogeneously broadened third order ($chi^{(3)}$) absorption spectrum show asymmetric line shapes, where the degree of asymmetry depends on the wavelength of the excitation beams. Theory based on the Optical Bloch Equations (OBE) indicates that the lineshape asymmetry is a result of fast decoherence in the system and the narrow resonances originate from coherent population pulsations that are induced by decoherence in the system. Using the OBE, we estimate that the decoherence time of the optically induced dipole (formed between the unexcited ground state the excited electron-hole pair) at room temperature is 125 fs, corresponding to a linewidth of ~10 meV. The decay time of the excitation is ~5-10 ns, depending on the excitation energy. The lineshapes are well fit with the OBE indicating that the resonances are characterized by discrete levels with no evidence of many body physics.
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.
Edge states of two-dimensional topological insulators are helical and single-particle backscattering is prohibited by time-reversal symmetry. In this work, we show that an isotropic exchange coupling of helical edge states (HES) to a spin 1/2 impurity subjected to a magnetic field results in characteristic backscattering current noise (BCN) as a function of bias voltage and tilt angle between the direction of the magnetic field and the quantization axis of the HES. In particular, we find transitions from sub-Poissonian (antibunching) to super-Poissonian (bunching) behavior as a direct consequence of the helicity of the edge state electrons. We use the method of full counting statistics within a master equation approach treating the exchange coupling between the spin-1/2 impurity and the HES perturbatively. We express the BCN via coincidence correlation functions of scattering processes between the HES which gives a precise interpretation of the Fano factor in terms of bunching and antibunching behavior of electron jump events. We also investigate the effect of electron-electron interactions in the HES in terms of the Tomonaga-Luttinger liquid theory.
196 - Jian Zhang , Ya Deng , Xiao Hu 2017
Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. In this work, we report a rational design of non-volatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion. The nanogaps are readily realized by electroburning in a partially suspended SWNTs device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultra-low writing energy (4.1*10-19 J per bit), ON/OFF ratio of 105, stable switching ON operations and over 30 hours retention time in ambient conditions, which are of great potential for applications.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا