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Register a new userLaser ablation loading of a surface-electrode ion trap
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We demonstrate loading by laser ablation of $^{88}$Sr$^+$ ions into a mm-scale surface-electrode ion trap. The laser used for ablation is a pulsed, frequency-tripled Nd:YAG with pulse energies of 1-10 mJ and durations of 3-5 ns. An additional laser is not required to photoionize the ablated material. The efficiency and lifetime of several candidate materials for the laser ablation target are characterized by measuring the trapped ion fluorescence signal for a number of consecutive loads. Additionally, laser ablation is used to load traps with a trap depth (40 meV) below where electron impact ionization loading is typically successful ($gtrsim$ 500 meV).
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We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By introducing a buffer gas, we can counteract the rf heating assocated with the micromotion and benefit from the larger trap depth. After an initial loading of the trap, standard compensation techniques can be used to cancel the stray fields resulting from charged dielectric and allow for the loading of the trap at ultra-high vacuum.
The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.
We describe the design, fabrication, and operation of a novel surface-electrode Paul trap that produces a radio-frequency-null along the axis perpendicular to the trap surface. This arrangement enables control of the vertical trapping potential and consequentially the ion-electrode distance via dc-electrodes only. We demonstrate confinement of single $^{40}$Ca$^+$ ions at heights between $50~mu$m and $300~mu$m above planar copper-coated aluminium electrodes. We investigate micromotion in the vertical direction and show cooling of both the planar and vertical motional modes into the ground state. This trap architecture provides a platform for precision electric-field noise detection, trapping of vertical ion strings without excess micromotion, and may have applications for scalable quantum computers with surface ion traps.
Two-dimensional crystals of trapped ions are a promising system with which to implement quantum simulations of challenging problems such as spin frustration. Here, we present a design for a surface-electrode elliptical ion trap which produces a 2-D ion crystal and is amenable to microfabrication, which would enable higher simulated coupling rates, as well as interactions based on magnetic forces generated by on-chip currents. Working in an 11 K cryogenic environment, we experimentally verify to within 5% a numerical model of the structure of ion crystals in the trap. We also explore the possibility of implementing quantum simulation using magnetic forces, and calculate J-coupling rates on the order of 10^3 / s for an ion crystal height of 10 microns, using a current of 1 A.
We characterise the performance of a surface-electrode ion chip trap fabricated using established semiconductor integrated circuit and micro-electro-mechanical-system (MEMS) microfabrication processes which are in principle scalable to much larger ion trap arrays, as proposed for implementing ion trap quantum information processing. We measure rf ion micromotion parallel and perpendicular to the plane of the trap electrodes, and find that on-package capacitors reduce this to <~ 10 nm in amplitude. We also measure ion trapping lifetime, charging effects due to laser light incident on the trap electrodes, and the heating rate for a single trapped ion. The performance of this trap is found to be comparable with others of the same size scale.
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