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Register a new userTuning the domain wall orientation in thin magnetic strips by induced anisotropy
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We report on a method to tune the orientation of in-plane magnetic domains and domain walls in thin ferromagnetic strips by manipulating the magnetic anisotropy. Uniaxial in-plane anisotropy is induced in a controlled way by oblique evaporation of magnetic thin strips. A direct correlation between the magnetization direction and the domain wall orientation is found experimentally and confirmed by micromagnetic simulations. The domain walls in the strips are always oriented along the oblique evaporation-induced easy axis, in spite of the shape anisotropy. The controlled manipulation of domain wall orientations could open new possibilities for novel devices based on domain-wall propagation.
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Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array were driven simultaneously and their displacement on the micrometer-scale was controlled by the current pulse amplitude and duration. At the lower current densities where DW displacements were observed (j less than or equal to 1.5 x 10^12 A/m^2), the DW motion obeys a creep law. At higher current density (j = 1.8 x 10^12 A/m^2), zero-field average DW velocities up to 130 +/- 10 m/s were recorded.
The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187 (2017)]. One of the most essential issues for device design is searching for low-power-consuming and high-efficient methods of controlling domain wall. In this work, we propose to use the voltage-controlled magnetic anisotropy gradient as an excitation source to drive the domain wall motion in ferrimagnets. The ultrafast wall motion under the anisotropy gradient is predicted theoretically based on the collective coordinate theory, which is confirmed by the atomistic micromagnetic simulations. The antiferromagnetic spin dynamics is realized at the angular momentum compensation point, and the wall shifting has a constant speed under small gradient and can be slightly accelerated under large gradient due to the broadened wall width during the motion. For nonzero net angular momentum, the Walker breakdown occurs at a critical anisotropy gradient significantly depending on the second anisotropy and interfacial Dzyaloshinkii-Moriya interaction, which is highly appreciated for further experiments including the materials selection and device geometry design. More importantly, this work unveils a low-power-consuming method of controlling the domain wall in ferrimagnets, benefiting to future spintronic applications.
A global picture of magnetic domain wall (DW) propagation in a nanowire driven by a magnetic field is obtained: A static DW cannot exist in a homogeneous magnetic nanowire when an external magnetic field is applied. Thus, a DW must vary with time under a static magnetic field. A moving DW must dissipate energy due to the Gilbert damping. As a result, the wire has to release its Zeeman energy through the DW propagation along the field direction. The DW propagation speed is proportional to the energy dissipation rate that is determined by the DW structure. An oscillatory DW motion, either the precession around the wire axis or the breath of DW width, should lead to the speed oscillation.
SrTiO$_3$ thin films were used as a model system to study the effects of strain and epitaxial constraint on structural phase transitions of perovskite films. The basic phenomena revealed will apply to a variety of important structural transitions including the ferroelectric transition. Highly strained SrTiO$_3$ films were grown on different substrates, providing both compressive and tensile strain. The measured strain-temperature phase diagram is qualitatively consistent with theory, however the increase in the phase transition temperature is much larger than predicted. Due to the epitaxial strain and substrate clamping, the SrTiO$_3$ lattice is tetragonal at all temperatures. The phase transitions involve only changes in internal symmetry. The low temperature phase under tensile strain has a unique structure with orthorhombic $Cmcm$ space group but a tetragonal lattice, an interesting consequence of epitaxial constraint.
We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10^9 - 10^10 A/m^2 is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width ~3 nm of domain walls in this compound.
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