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Register a new userSize Effects in the Magnetoresistance of Graphite: Absence of Magnetoresistance in Micrometer size Samples
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We present a study of the magnetoresistance of highly oriented pyrolytic graphite (HOPG) as a function of the sample size. Our results show unequivocally that the magnetoresistance reduces with the sample size even for samples of hundreds of micrometers size. This sample size effect is due the large mean free path and Fermi wavelength of carriers in graphite and may explain the observed practically absence of magnetoresistance in micrometer confined small graphene samples where quantum effects should be at hand. These were not taken into account in the literature yet and ask for a revision of experimental and theoretical work on graphite.
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The chirality-induced spin selectivity (CISS) effect enables the detection of chirality as electrical charge signals. It is often studied in a spin-valve device where a ferromagnet is connected to a chiral component between two electrodes, and magnetoresistance (MR) is reported upon magnetization reversal. This however is not expected in the linear response regime because of compensating reciprocal processes, thereby limiting the interpretation of experimental results. Here we show that MR effects can indeed appear in the linear response regime, but not by complete magnetization or magnetic field reversal. We illustrate this in a spin-valve device and in a chiral thin film as the CISS-induced Hanle magnetoresistance (CHMR) effect.
Quantum size effects in armchair graphene nano-ribbons (AGNR) with hydrogen termination are investigated via density functional theory (DFT) in Kohn-Sham formulation. Selection rules will be formulated, that allow to extract (approximately) the electronic structure of the AGNR bands starting from the four graphene dispersion sheets. In analogy with the case of carbon nanotubes, a threefold periodicity of the excitation gap with the ribbon width (N, number of carbon atoms per carbon slice) is predicted that is confirmed by ab initio results. While traditionally such a periodicity would be observed in electronic response experiments, the DFT analysis presented here shows that it can also be seen in the ribbon geometry: the length of a ribbon with L slices approaches the limiting value for a very large width 1 << N (keeping the aspect ratio small N << L) with 1/N-oscillations that display the electronic selection rules. The oscillation amplitude is so strong, that the asymptotic behavior is non-monotonous, i.e., wider ribbons exhibit a stronger elongation than more narrow ones.
We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, like chemically pure break junctions, large AMR only occurs if the orbital polarization of the current is large, regardless of the anisotropy of the density of states. In systems that display localized states close to the Fermi energy, like a single electron transistor with ferromagnetic electrodes, large AMR is related to the variation of the Fermi energy as a function of the magnetization direction.
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion.
Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions in Dirac materials due to quantum interference in scalar impurity scattering potentials. It reveals a striking crossover from positive to negative magnetoresistivity, uncovering strong competition between weak localization and weak antilocalization in multiple Cooperon modes at different chemical potentials, effective masses and finite temperatures. The work sheds light on the important role of strong coupling of the conduction and valence bands in the quantum interference transport in topological nontrivial and trivial Dirac materials.
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