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Register a new userValley polarization effects on the localization in graphene Landau levels
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Effects of disorder and valley polarization in graphene are investigated in the quantum Hall regime. We find anomalous localization properties for the lowest Landau level (LL), where disorder can induce wavefunction delocalization (instead of localization), both for white-noise and gaussian-correlated disorder. We quantitatively identify the contribution of each sublattice to wavefunction amplitudes. Following the valley (sublattice) polarization of states within LLs for increasing disorder we show: (i) valley mixing in the lowest LL is the main effect behind the observed anomalous localization properties, (ii) the polarization suppression with increasing disorder depends on the localization for the white-noise model, while, (iii) the disorder induces a partial polarization in the higher Landau levels for both disorder models.
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We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity $v_mathrm{F}$. In contrast to the logarithmic divergence of $v_mathrm{F}$ at zero magnetic field, we find a piecewise linear scaling of $v_mathrm{F}$ as a function of charge carrier density, due to a magnetic field-induced suppression of the long-range Coulomb interaction. We quantitatively confirm our experimental findings by performing tight-binding calculations on the level of the Hartree-Fock approximation, which also allow us to estimate an excitonic binding energy of $approx$ 6 meV contained in the experimentally extracted Landau level transitions energies.
Developments in the physics of 2D electron systems during the last decade have revealed a new class of nonequilibrium phenomena in the presence of a moderately strong magnetic field. The hallmark of these phenomena is magnetoresistance oscillations generated by the external forces that drive the electron system out of equilibrium. The rich set of dramatic phenomena of this kind, discovered in high mobility semiconductor nanostructures, includes, in particular, microwave radiation-induced resistance oscillations and zero-resistance states, as well as Hall field-induced resistance oscillations and associated zero-differential resistance states. We review the experimental manifestations of these phenomena and the unified theoretical framework for describing them in terms of a quantum kinetic equation. The survey contains also a thorough discussion of the magnetotransport properties of 2D electrons in the linear response regime, as well as an outlook on future directions, including related nonequilibrium phenomena in other 2D electron systems.
We study RKKY interactions for magnetic impurities on graphene in situations where the electronic spectrum is in the form of Landau levels. Two such situations are considered: non-uniformly strained graphene, and graphene in a real magnetic field. RKKY interactions are enhanced by the lowest Landau level, which is shown to form electron states binding with the spin impurities and add a strong non-perturbative contribution to pairwise impurity spin interactions when their separation $R$ no more than the magnetic length. Beyond this interactions are found to fall off as $1/R^3$ due to perturbative effects of the negative energy Landau levels. Based on these results, we develop simple mean-field theories for both systems, taking into account the fact that typically the density of states in the lowest Landau level is much smaller than the density of spin impurities. For the strain field case, we find that the system is formally ferrimagnetic, but with very small net moment due to the relatively low density of impurities binding electrons. The transition temperature is nevertheless enhanced by them. For real fields, the system forms a canted antiferromagnet if the field is not so strong as to pin the impurity spins along the field. The possibility that the system in this latter case supports a Kosterlitz-Thouless transition is discussed.
Considering the difference of energy bands in graphene and silicene, we put forward a new model of the graphene-silicene-graphene (GSG) heterojunction. In the GSG, we study the valley polarization properties in a zigzag nanoribbon in the presence of an external electric field. We find the energy range associated with the bulk gap of silicene has a valley polarization more than 95%. Under the protection of the topological edge states of the silicene, the valley polarization remains even the small non-magnetic disorder is introduced. These results have certain practical significance in applications for future valley valve.
The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which consists of several paralleling line-defects. The related incident angle can be controlled easily by tuning the parameters of the resonator. Therefore, a controllable 100% valley polarization, as well as the detection of the valley polarization, can be realized conveniently by tuning the number of line-defects and the distance between two nearest neighbouring line-defects. This fascinating finding opens a way to realize the valley polarization by line-defects. With the advancement of experimental technologies, this resonator is promising to be realized and thus plays a key role in graphene valleytronics.
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