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We study the spin Coulomb drag in a quasi-two-dimensional electron gas beyond the random phase approximation (RPA). We find that the finite transverse width of the electron gas causes a significant reduction of the spin Coulomb drag. This reduction, however, is largely compensated by the enhancement coming from the inclusion of many-body local field effects beyond the RPA, thereby restoring good agreement with the experimental observations by C. P. Weber textit{et al.}, Nature, textbf{437}, 1330 (2005).
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We find that the temperature dependence of the drag resistivity ($rho_{D}$) between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Near the apparent metal-insulator transition, the temperature dependence of the drag, given by $T^{alpha}$, weakens with the application of a parallel magnetic field ($B_{||}$), with $alpha$ saturating at half its zero field value for $B_{||} > B^{*}$, where $B^{*}$ is the polarization field. Furthermore, we find that $alpha$ is roughly 2 at the parallel field induced metal-insulator transition, and that the temperature dependence of $rho_{D}/T^{2}$ at different $B_{||}$ looks strikingly similar to that found in the single layer resistivity. In contrast, at higher densities, far from the zero field transition, the temperature dependence of the drag is roughly independent of spin polarization, with $alpha$ remaining close to 2, as expected from a simple Fermi liquid picture.
Recent years have seen a surge of interest in studies of hydrodynamic transport in electronic systems. We investigate the electron viscosity of metals and find a new component that is closely related to Coulomb drag. Using the linear response theory, viscosity, a transport coefficient for momentum, can be extracted from the retarded correlation function of the momentum flux, i.e., the stress tensor. There exists a previously overlooked contribution to the shear viscosity from the interacting part of the stress tensor which accounts for the momentum flow induced by interactions. This contribution, which we dub drag viscosity, is caused by the frictional drag force due to long-range interactions. It is therefore linked to Coulomb drag which also originates from the interaction induced drag force. Starting from the Kubo formula and using the Keldysh technique, we compute the drag viscosity of 2D and 3D metals along with the drag resistivity of double-layer 2D electronic systems. Both the drag resistivity and drag viscosity exhibit a crossover from quadratic-in-T behavior at low temperatures to a linear one at higher temperatures. Although the drag viscosity appears relatively small compared with the normal Drude component for the clean metals, it may dominate hydrodynamic transport in some systems, which are discussed in the conclusion.
Coulomb drag is a process whereby the repulsive interactions between electrons in spatially separated conductors enable a current flowing in one of the conductors to induce a voltage drop in the other. If the second conductor is part of a closed circuit, a net current will flow in that circuit. The drag current is typically much smaller than the drive current owing to the heavy screening of the Coulomb interaction. There are, however, rare situations in which strong electronic correlations exist between the two conductors. For example, bilayer two-dimensional electron systems can support an exciton condensate consisting of electrons in one layer tightly bound to holes in the other. One thus expects perfect drag; a transport current of electrons driven through one layer is accompanied by an equal one of holes in the other. (The electrical currents are therefore opposite in sign.) Here we demonstrate just this effect, taking care to ensure that the electron-hole pairs dominate the transport and that tunneling of charge between the layers is negligible.
We work out a theory of shot noise in a special case. This is a noise of the Coulomb drag current excited under the ballistic transport regime in a one-dimensional nanowire by a ballistic non-Ohmic current in a nearby parallel nanowire. We predict sharp oscillation of the noise power as a function of gate voltage or the chemical potential of electrons. We also study dependence of the noise on the voltage V across the driving wire. For relatively large values of V the noise power is proportional to V^2.
Recent experiments on Coulomb drag in the quantum Hall regime have yielded a number of surprises. The most striking observations are that the Coulomb drag can become negative in high Landau levels and that its temperature dependence is non-monotonous. We develop a systematic diagrammatic theory of Coulomb drag in strong magnetic fields explaining these puzzling experiments. The theory is applicable both in the diffusive and the ballistic regimes; we focus on the experimentally relevant ballistic regime (interlayer distance $a$ smaller than the cyclotron radius $R_c$). It is shown that the drag at strong magnetic fields is an interplay of two contributions arising from different sources of particle-hole asymmetry, namely the curvature of the zero-field electron dispersion and the particle-hole asymmetry associated with Landau quantization. The former contribution is positive and governs the high-temperature increase in the drag resistivity. On the other hand, the latter one, which is dominant at low $T$, has an oscillatory sign (depending on the difference in filling factors of the two layers) and gives rise to a sharp peak in the temperature dependence at $T$ of the order of the Landau level width.
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