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Register a new userNonequilibrium 1/f Noise in Low-doped Manganite Single Crystals
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1/f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature suggesting that resistivity fluctuations constitute a fixed fraction of the total resistivity, independently of the dissipation mechanism and magnetic state of the system. The noise scales as a square of the current as expected for equilibrium resistivity fluctuations. However, at 77 K at bias exceeding some threshold, the noise intensity starts to decrease with increasing bias. The appearance of nonequilibrium noise is interpreted in terms of bias dependent multi-step indirect tunneling.
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Low frequency noise in current biased La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ single crystals has been investigated in a wide temperature range from 79 K to 290 K. Despite pronounced changes in magnetic properties and dissipation mechanisms of the sample with changing temperature, the noise spectra were found to be always of the 1/f type and their intensity (except the lowest temperature studied) scaled as a square of the bias. At liquid nitrogen temperatures and under bias exceeding some threshold value, the behavior of the noise deviates from the quasi-equilibrium modulation noise and starts to depend in a non monotonic way on bias. It has been verified that the observed noise obeys Dutta and Horn model of 1/f noise in solids. The appearance of nonequilibrium 1/f noise and its dependence on bias have been associated with changes in the distribution of activation energies in the underlying energy landscape. These changes have been correlated with bias induced changes in the intrinsic tunneling mechanism dominating dissipation in La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ at low temperatures.
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.
Deterministic oscillations of current-induced metastable resistivity in changing voltage have been detected in La$_{0.82}$Ca$_{0.18}$MnO$_3$ single crystals. At low temperatures, below the Curie point, application of specific bias procedures switches the crystal into metastable resistivity state characterized by appearance of pronounced reproducible and random structures in the voltage dependence of the differential conductivity. In certain bias range equally spaced broad conductivity peaks have been observed. The oscillating conductivity has been tentatively ascribed to resonances in a quantum well within the double tunnel barrier of intrinsic weak-links associated with twin-like defect boundaries.
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in thick MoS2 transistors is of the same level as that in graphene. The MoS2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with thick channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 thin-film transistors.
Conductivity noise in dc current biased La_{0.82}Ca_{0.18}MnO_{3} single crystals has been investigated in different metastable resistivity states enforced by applying voltage pulses to the sample at low temperatures. Noise measured in all investigated resistivity states is of 1/f-type and its intensity at high temperatures and low dc bias scales as a square of the bias. At liquid nitrogen temperatures for under bias exceeding a threshold value, the behavior of the noise deviates from above quasi- equilibrium modulation noise and depends in a non monotonic way on applied bias. The bias range of nonequilibrium 1/f noise coincides with the range at which the conductance increases linearly with bias voltage. This feature is attributed to a broad continuity of states enabling indirect inelastic tunneling across intrinsic tunnel junctions. The nonequilibrium noise has been ascribed to indirect intrinsic tunneling mechanism while resistivity changes in metastable states to variations in the energy landscape for charge carriers introduced by microcracks created by the pulse procedures employed
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