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Register a new userFerromagnetic redshift of the optical gap in GdN
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We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie temperature. The paramagnetic gap is larger than was suggested by very early experiments, and has permitted us to refine a (LSDA+U)-computed band structure. The band structure was computed in the full translation symmetry of the ferromagnetic ground state, assigning the paramagnetic-state gap as the average of the majority- and minority-spin gaps in the ferromagnetic state. That procedure has been further tested by a band structure in a 32-atom supercell with randomly-oriented spins. After fitting only the paramagnetic gap the refined band structure then reproduces our measured gaps in both phases by direct transitions at the X point.
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A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from metals, and coupled with the rarity of intrinsic ferromagnetic semiconductors this has driven intensive study of diluted magnetic semiconductors. Chief among these is the doped III-V compound (Ga,Mn)As. These materials suffer from a number of drawbacks; they (i) require magnetic-ion doping well above the solubility limit, and (ii) must be hole doped to above the degenerate limit, preventing independent control of the carrier concentration and charge sign. Here we demonstrate the first epitaxial growth of a recently-characterised intrinsic ferromagnetic semiconductor, GdN, on silicon substrates, providing an essential step on the way to integrate new spintronics functionalities into Si-based technology. The films have been characterised as regards their growth toward fully relaxed GdN, the density and mobility of their carriers, and their magnetic behaviour.
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We report the effects of electron doping on the ground state of a diamagnetic semiconductor FeGa$_{3}$ with a band gap of 0.5 eV. By means of electrical resistivity, magnetization and specific heat measurements we have found that gradual substitution of Ge for Ga in FeGa$_{3-y}$Ge$_{y}$ yields metallic conduction at a very small level of $y = 0.006$, then induces weak ferromagnetic (FM) order at $y = 0.13$ with a spontaneous moment of 0.1 $mu_{B}$/Fe and a Curie temperature $T_{C}= 3.3$ K, which continues increasing to $T_{C} = 75$ K as doping reaches $y = 0.41$. The emergence of the FM state is accompanied by quantum critical behavior as observed in the specific heat, $C/T propto -$ln$T$, and in the magnetic susceptibility, $M/B propto T^{-4/3}$. At $y= 0.09$, the specific heat divided by temperature $C/T$ reaches a large value of 70 mJ/K$^{2}$molFe, twice as large as that reported on FeSi$_{1-x}$Ge$_{x}$ for $x_{c}= 0.37$ and Fe$_{1-x}$Co$_{x}$Sb$_{2}$ for $x_{c}=0.3$ at their respective FM quantum critical points. The critical concentration $y_{c}=0.13$ in FeGa$_{3-y}$Ge$_{y}$ is quite small, despite the fact that its band gap is one order of magnitude larger than those in FeSi and FeSb$_{2}$. In contrast, no FM state emerges by substituting Co for Fe in Fe$_{1-x}$Co$_{x}$Ga$_{3}$ in the whole range $0 leq x leq 1$, although both types of substitution should dope electrons into FeGa$_{3}$. The FM instability found in FeGa$_{3-y}$Ge$_{y}$ indicates that strong electron correlations are induced by the disturbance of the Fe 3d - Ga 4p hybridization.
We have studied the temperature dependence of spectroscopic ellipsometry spectra of an electrically insulating, nearly stoichiometric YTiO_3 single crystal with ferromagnetic Curie temperature T_C = 30 K. The optical response exhibits a weak but noticeable anisotropy. Using a classical dispersion analysis, we identify three low-energy optical bands at 2.0, 2.9, and 3.7 eV. Although the optical conductivity spectra are only weakly temperature dependent below 300 K, we are able to distinguish high- and low-temperature regimes with a distinct crossover point around 100 K. The low-temperature regime in the optical response coincides with the temperature range in which significant deviations from Curie-Weiss mean field behavior are observed in the magnetization. Using an analysis based on a simple superexchange model, the spectral weight rearrangement can be attributed to intersite d_i^1d_j^1 longrightarrow d_i^2d_j^0 optical transitions. In particular, Kramers-Kronig consistent changes in optical spectra around 2.9 eV can be associated with the high-spin-state (^3T_1) optical transition. This indicates that other mechanisms, such as weakly dipole-allowed p-d transitions and/or exciton-polaron excitations, can contribute significantly to the optical band at 2 eV. The recorded optical spectral weight gain of 2.9 eV optical band is significantly suppressed and anisotropic, which we associate with complex spin-orbit-lattice phenomena near ferromagnetic ordering temperature in YTiO_3.
We report a comprehensive neutron scattering study on the spin excitations in the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ with quasi-two-dimensional structure. Both in-plane and out-of-plane dispersions of the spin waves are revealed in the ferromagnetic state, similarly dispersive but damped spin excitations persist into the paramagnetic state. The effective exchange interactions have been estimated by a semi-classical Heisenberg model to consistently reproduce the experimental $T_C$ and spin stiffness. However, a full spin wave gap below $E_g=2.3$ meV is observed at $T=4$ K, much larger than the estimated magnetic anisotropy energy ($sim0.6$ meV), while its temperature dependence indicates a significant contribution from the Weyl fermions. These results suggest that Co$_3$Sn$_2$S$_2$ is a three-dimensional correlated system with large spin stiffness, and the low-energy spin dynamics could interplay with the topological electron states.
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