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Register a new userGiant Fluctuations of Coulomb Drag in a Bilayer System
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We have observed reproducible fluctuations of the Coulomb drag, both as a function of magnetic field and electron concentration, which are a manifestation of quantum interference of electrons in the layers. At low temperatures the fluctuations exceed the average drag, giving rise to random changes of the sign of the drag. The fluctuations are found to be much larger than previously expected, and we propose a model which explains their enhancement by considering fluctuations of local electron properties.
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We report observations of the Coulomb drag effect between two effectively 2-d insulating a-Si_{1-x}Nb_{x} films. We find that there only exist a limited range of experimental parameters over which we can measure a sizable linear-response transresistivity (rho_{d}). The temperature dependence of rho_{d} is consistent with the layers being Efros-Shklovskii Anderson insulators provided that a 3-d density of states and a localization length smaller than that obtained from the DC layer-conductivity are assumed.
Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions can be accessed for devices consisting of two monlolayer graphene (MLG) crystals, separated by few layer hexagonal boron-nitride. Here we report measurement of Coulomb drag in a double bilayer graphene (BLG) stucture, where the interaction potential is anticipated to be yet further enhanced compared to MLG. At low temperatures and intermediate densities a new drag response with inverse sign is observed, distinct from the momentum and energy drag mechanisms previously reported in double MLG. We demonstrate that by varying the device aspect ratio the negative drag component can be suppressed and a response showing excellent agreement with the density and temperature dependance predicted for momentum drag in double BLG is found. Our results pave the way for pursuit of emergent phases in strongly interacting bilayers, such as the exciton condensate.
Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical simulations that this is a consequence of a structural transformation of the moir{e} pattern inherent of twisted bilayer graphene taking place at twist angles $theta$ below a crossover angle $theta^{star}=1.2^{circ}$. The transformation is governed by the interplay between the interlayer van der Waals interaction and the in-plane strain field, and is revealed by a change in the functional form of the twist energy density. This transformation unveils an electronic regime characteristic of vanishing twist angles in which the charge density converges, though not uniformly, to that of ideal bilayer graphene with Bernal stacking. On the other hand, the stacking domain boundaries form a distinct charge density pattern that provides the STM signature of the hexagonal solitonic network.
We study the localization properties of electrons in incommensurate twisted bilayer graphene for small angles, encompassing the narrow-band regime, by numerically exact means. Sub-ballistic states are found within the narrow-band region around the magic angle. Such states are delocalized in momentum-space and follow non-Poissonian level statistics, in contrast with their ballistic counterparts found for close commensurate angles. Transport results corroborate this picture: for large enough systems, the conductance decreases with system size for incommensurate angles within the sub-ballistic regime. Our results show that incommensurability effects are of crucial importance in the narrow-band regime. The incommensurate nature of a general twist angle must therefore be taken into account for an accurate description of magic-angle twisted bilayer graphene.
We present the first experimental study of mesoscopic fluctuations of Coulomb drag in a system with two layers of composite fermions, which are seen when either the magnetic field or carrier concentration are varied. These fluctuations cause an alternating sign of the average drag. We study these fluctuations at different temperatures to establish the dominant dephasing mechanism of composite fermions.
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