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Register a new userDisorder screening near the Mott-Anderson transition
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Added by
Maria Carolina O. Aguiar
Publication date
2007
fields
Physics
and research's language is
English
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Correlation-driven screening of disorder is studied within the typical-medium dynamical mean-field theory (TMT-DMFT) of the Mott-Anderson transition. In the strongly correlated regime, the site energies epsilon_R^i characterizing the effective disorder potential are strongly renormalized due to the phenomenon of Kondo pinning. This effect produces very strong screening when the interaction U is stronger then disorder W, but applies only to a fraction of the sites in the opposite limit (U<W).
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We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects, dramatically modify the quantum critical behavior near disordered Mott transitions. The leading critical behavior of quasiparticle wavefunctions is shown to assume a universal form in the full range from weak to strong disorder, in contrast to disorder-driven non-Fermi liquid (electronic Griffiths phase) behavior, which is found only in the strongly correlated regime.
We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) - the simplest extension of dynamical mean field theory (DMFT) capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a site selective Mott localization; the rest become Anderson-localized quasiparticles.
We study the role of electronic correlation in a disordered two-dimensional model by using a variational wave function that can interpolate between Anderson and Mott insulators. Within this approach, the Anderson-Mott transition can be described both in the paramagnetic and in the magnetic sectors. In the latter case, we find evidence for the formation of local magnetic moments that order before the Mott transition. The charge gap opening in the Mott insulator is accompanied by the vanishing of the $lim_{qto 0} overline{< n_q>< n_{-q}>}$ (the bar denoting the impurity average), which is related to the compressibility fluctuations. The role of a frustrating (second-neighbor) hopping is also discussed, with a particular emphasis to the formation of metastable spin-glass states.
We point out that fractionalized bosonic charge excitations can explain the recently discovered photo-induced superconducting-like response in $kappatext{-(ET})_2text{Cu}[text{N(CN)}_2]text{Br}$, an organic metal close to the Mott transition. The pump laser exerts a periodic drive on the fractionalized field, creating a non-equilibrium condensate, which gives a Drude peak much narrower than the equilibrium scattering rate, hence superconducting-like response. Our proposal illuminates new possibilities of detecting fractionalization and can be readily tested in spin liquid candidates and in cold atom systems.
A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems but their origins are as yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr$_3$(Ir$_{1-x}$Ru$_x$)$_2$O$_7$ which drives the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT such as power law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.
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