In this work, the effect of electric permittivity and thin layer thickness on the energy
gape has been studied in a system consisting of three thin layers by means of finding the
self action potential of charge carrier located in the central layer
of this system. Then, the
self action potential energy has been found by solving Schrödinger equation at the
extracted potential. This study shows that energy gape of PbI2 decreases with layer
thickness while it increases/decreases according to comparison between dielectric
permittivity values of central layer and counterparts of two neighborhood layers on both sides.
The manifestation of the self-action potential for charge carrier in system consisted of three spatially heterogeneous layers is investigated theoretically. The expressions for the self-action potential energy of a test charge placed in a central la
yer of the three-layer structures. The self-action potential energy of electron- hole and Wannier – Mott exciton are calculated numerically. The self-action potential energy of electron- hole and Wannier – Mott exciton are plotted as a function.