The aim of this paper is to discuss the operation of an all silicon-based solution for the conventional Marx
generator circuit, which has been developed for high-frequency (kHz), high-voltage (kV) applications
needing rectangular pulses. The conven
tional Marx generator, for high-voltage pulsed applications, uses
passive power components (inductors or resistors), to supply the energy storage capacitors. This solution
has the disadvantages of cost, size, power losses and limited frequency operation. In the proposed circuit,
the bulky passive power elements are replaced by power semiconductor switches, increasing the
performance of the classical circuit, strongly reducing costs, losses and increasing the pulse repetition
frequency. Also, the proposed topology enables the use of typical half-bridge semiconductor structures,
and ensures that the maximum voltage blocked by the semiconductors equals the power supply voltage
(i.e. the voltage of each capacitor), even with mismatches in the synchronized switching, and in fault
conditions. A laboratory prototype with two stages of the proposed silicon-based Marx generator circuit
was constructed using IGBTs and diodes, operating with about 1000 V dc input voltage and 10 kHz
frequency, with different rise times.