In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT). In the case of superconductivity, the order parameter has an amplitude and a phase, which can both fluctuate according to well identified scenarios. The Ginzburg-Landau theory and its extensions describe the fluctuating regime of regular metallic superconductors, and the associated dynamics of the pair amplitude and the phase. When the system is two-dimensional and/or very disordered, phase fluctuations dominate. Here, we address the possibility that a new type of fluctuations occurs in superconductors with an anomalous dynamics. In particular we show that the superconducting to metal QPT that occurs upon changing the gate voltage in two-dimensional electron gases at LAO/STO and LTO/STO interfaces displays anomalous scaling properties, which can be explained by density driven superconducting critical fluctuations. A Finite Size Scaling (FSS) analysis reveals that the product z.nu (nu is the correlation length exponent and z the dynamical critical one) is z.nu = 3/2. We argue that critical superconducting fluctuations acquire an anomalous dynamics with z=3, since they couple to density ones in the vicinity of a spontaneous electronic phase separation, and that nu=1/2 corresponds to the mean-field value. This approach strongly departs from the conventional z=1 scenario in disordered 2D systems based on long-range Coulomb interactions with dominant phase fluctuations. This scenario can explain recent data in LSCO ultra-thin films, and apply to a whole class of two-dimensional superconductors.
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic doping. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.
We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent u, we show that the QPT can be clean or dirty according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a theoretical approach of Spivak et al., in the framework of the fermionic scenario of 2D superconducting QPT.
Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.
