A magnetic-field-driven transition from metallic- to semiconducting-type behavior in the basal-plane resistance takes place in highly oriented pyrolytic graphite at a field $H_c sim 1~$kOe applied along the hexagonal c-axis. The analysis of the data reveals a striking similarity between this transition and that measured in thin-film superconductors and Si MOSFETs. However, in contrast to those materials, the transition in graphite is observable at almost two orders of magnitude higher temperatures.
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