High spin to charge conversion efficiency is the requirement for the spintronics devices which is governed by spin pumping and inverse spin Hall effect (ISHE). In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet/ heavy metal (HM) heterostructures. Recently antiferromagnetic (AFM) materials are found to be good replacement of HMs because AFMs exhibit terahertz spin dynamics, high spin-orbit coupling, and absence of stray field. In this context we have performed the ISHE in CoFeB/ IrMn heterostructures. Spin pumping study is carried out for $Co_{40}Fe_{40}B_{20} (12 nm)/ Cu (3 nm)/ Ir_{50}Mn_{50} (t nm)/ AlO_{x} (3 nm)$ samples where textit{t} value varies from 0 to 10 nm. Damping of all the samples are higher than the single layer CoFeB which indicates that spin pumping due to IrMn is the underneath mechanism. Further the spin pumping in the samples are confirmed by angle dependent ISHE measurements. We have also disentangled other spin rectifications effects and found that the spin pumping is dominant in all the samples. From the ISHE analysis the real part of spin mixing conductance (textit{$g_{r}^{uparrow downarrow}$}) is found to be 0.704 $pm$ 0.003 $times$ $10^{18}$ $m^{-2}$.
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