Noncentrosymmetric bulk crystals generate photocurrent without any bias voltage. One of the dominant mechanisms, shift current, comes from a quantum interference of electron wave functions being distinct from classical current caused by electrons drift or diffusion. The dissipation-less nature of shift current, however, has not been fully verified presumably due to the premature understanding on the role of electrodes. Here we show that the photocurrent dramatically enhances by choosing electrodes with large work function for a $p$-type ferroelectric semiconductor SbSI. An optimized device shows a nearly constant zero-bias photocurrent despite significant variation in photocarrier mobility dependent on temperature, which could be a clear hallmark for the dissipation-less nature of shift current. Distinct from conventional photovoltaic devices, the shift current generator operates as a majority carrier device. The present study provides fundamental design principles for energy-harvesting and photo-detecting devices with novel architectures optimal for the shift current photovoltaic effect.
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