We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface roughness below 1 nm and minimal variations in work function across the surface due to the absence of polycrystalline grains. We are able to set the electron density in the channels using a ground plane. We estimate a mobility of 300 cm$^2$/V$cdot$s and electron densities as high as 2.56$times$10$^9$ cm$^{-2}$. We demonstrate control of the transport using a barrier which enables pinchoff at a central microchannel connecting two reservoirs. The conductance through the central microchannel is measured to be 10 nS for an electron density of 1.58$times$10$^9$ cm$^{-2}$. Our work extends transport measurements of surface electrons to thin helium films in microchannel devices above metallic substrates.
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