Thermal detection of single e-h pairs in a biased silicon crystal detector

We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor (QET) arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to $pm$ 160 V were used in the work reported here. A fiber optic provides 650~nm (1.9 eV) photons that each produce an electron-hole ($e^{-} h^{+}$) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise $sigma$ $sim$0.09 $e^{-} h^{+}$ pair. The observed charge quantization is nearly identical for $h^+$s or $e^-$s transported across the crystal.