Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional spin-transfer-torque (STT) switching, a pure spin current source with large spin Hall angle (${theta}_{SH}$ > 1) and high electrical conductivity (${sigma} > 10^5 {Omega}^{-1}m^{-1}$) is required. Here, we demonstrate such a pure spin current source: BiSb thin films with ${sigma}{sim}2.5*10^5 {Omega}^{-1}m^{-1}$, ${theta}_{SH}{sim}52$, and spin Hall conductivity ${sigma}_{SH}{sim}1.3*10^7 {hbar}/2e{Omega}^{-1}m^{-1}$ at room temperature. We show that BiSb thin films can generate a colossal spin-orbit field of 2770 Oe/(MA/cm$^2$) and a critical switching current density as low as 1.5 MA/cm$^2$ in Bi$_{0.9}$Sb$_{0.1}$ / MnGa bi-layers. BiSb is the best candidate for the first industrial application of topological insulators.
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