In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it with time-domain circuit simulations using a self-consistent ferroelectric (FE) compact model. While the energy to charge a capacitor is dissipated in the interconnect and transistor resistance, we note that the energy to switch a capacitor and a FE is independent of the interconnect resistance value to the first order. Also device design can mitigate the parasitic energy losses. We further show the circuit simulations for a sub 10 aJ switching operation of a MESO logic device comprehending: a) Energy stored in multiferroic; b) Energy dissipation in the resistance of the interconnect, Ric ; c) Energy dissipation in the inverse spin-orbit coupling (ISOC) spin to charge converter Risoc; d) Supply, ground resistance, and transistor losses. We also identify the requirements for the resistivity of the spin-orbit coupling materials and address the effect of internal resistance of the spin to charge conversion layer. We provide the material parameter space where MESO (with a fan-out of 1 and interconnect) achieves sub 10 aJ switching energy with path for scaling via ferroelectric/magnetoelectric/spin-orbit materials development.
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