We study how the non-Fermi-liquid two-phase state reveals itself in transport properties of high-mobility Si-MOSFETs. We have found features in zero-field transport, magnetotransport, and thermodynamic spin magnetization in a 2D correlated electron system that may be directly related with the two-phase state. The features manifest above a density dependent temperature $T^*$ that represents a novel high-energy scale, apart from the Fermi energy. More specifically, in magnetoconductivity, we found a sharp onset of the novel regime $delta sigma(B,T) propto (B/T)^2$ above a density-dependent temperature $T_{rm kink}(n)$, a high-energy behavior that mimics the low-temperature diffusive interaction regime. The zero-field resistivity temperature dependence exhibits an inflection point $T_{rm infl}(n)$. In thermodynamic magnetization, the weak-field spin susceptibility per electron, $partial chi /partial n$ changes sign at $T_{dM/dn}(n)$. All three notable temperatures, $T_{rm kink}$, $T_{rm infl}$, and $T_{d M/ d n}$, behave critically $propto (n-n_c)$, are close to each other, and are intrinsic to high-mobility samples solely, we therefore associate them with an energy scale $T^*$ caused by interactions in the 2DE system.
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