A study of identification properties of a Si-Si DE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the DE-E technique or Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the DE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher than at full depletion. Good isotopic identification via PSA has been obtained from a partially depleted detector whose doping uniformity is not good enough for isotopic identification at full depletion.
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