Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures

The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at $Tgeqslant 0$ using the method of finite-temperature Greens functions and Dyson equation. Components of the Hamiltonian describing the system of electrons with acoustic phonons and the magnitudes of the electron spectrum shifts due to the electron-phonon interaction were obtained. Dependences of the electronic spectrum levels and spectrum of the acoustic phonons were found depending on the position of the internal potential barrier in the studied nanostructure. The temperature shifts of the electronic spectrum and decay rates were calculated for various values of temperature $T$.