Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb

We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~text{%}$) due to lattice mismatch. The thin films have a $omega$ full width half max of $7.7^{}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Neel temperature of $62~text{K}$, a Curie-Weiss temperature of $-65~text{K}$ and an effective moment of $5.9~mu_{text{B}}/text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~text{K}$ of $35~muOmegacdot text{cm}$.