High-performance thermoelectric oxides could offer a great energy solution for integrated and embedded applications in sensing and electronics industries. Oxides, however, often suffer from low Seebeck coefficient when compared with other classes of thermoelectric materials. In search of high-performance thermoelectric oxides, we present a comprehensive density functional investigation, based on GGA$+U$ formalism, surveying the 3d and 4d transition-metal-containing ferrites of the spinel structure. Consequently, we predict MnFe$_2$O$_4$ and RhFe$_2$O$_4$ have Seebeck coefficients of $sim pm 600$ $mu$V K$^{-1}$ at near room temperature, achieved by light hole and electron doping. Furthermore, CrFe$_2$O$_4$ and MoFe$_2$O$_4$ have even higher ambient Seebeck coefficients at $sim pm 700$ $mu$V K$^{-1}$. In the latter compounds, the Seebeck coefficient is approximately a flat function of temperature up to $sim 700$ K, offering a tremendous operational convenience. Additionally, MoFe$_2$O$_4$ doped with $10^{19}$ holes/cm$^3$ has a calculated thermoelectric power factor of $689.81$ $mu$W K$^{-2}$ m$^{-1}$ at $300$ K, and $455.67$ $mu$W K$^{-2}$ m$^{-1}$ at $600$ K. The thermoelectric properties predicted here can bring these thermoelectric oxides to applications at lower temperatures traditionally fulfilled by more toxic and otherwise burdensome materials.
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