Using a high quality factor 3 GHz bulk acoustic wave resonator device, we demonstrate the acoustically driven single quantum spin transition ($left|m_{s}=0right>leftrightarrowleft|pm1right>$) for diamond NV centers and characterize the corresponding stress susceptibility. A key challenge is to disentangle the unintentional magnetic driving field generated by device current from the intentional stress driving within the device. We quantify these driving fields independently using Rabi spectroscopy before studying the more complicated case in which both are resonant with the single quantum spin transition. By building an equivalent circuit model to describe the devices current and mechanical dynamics, we quantitatively model the experiment to establish their relative contributions and compare with our results. We find that the stress susceptibility of the NV center spin single quantum transition is around $sqrt{2}(0.5pm0.2)$ times that for double quantum transition ($left|+1right>leftrightarrowleft|-1right>$). Although acoustic driving in the double quantum basis is valuable for quantum-enhanced sensing applications, double quantum driving lacks the ability to manipulate NV center spins out of the $left|m_{s}=0right>$ initialization state. Our results demonstrate that efficient all-acoustic quantum control over NV centers is possible, and is especially promising for sensing applications that benefit from the compact footprint and location selectivity of acoustic devices.
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