Mechanical tunability of an ultra-narrow spectral feature with uniaxial stress

Rare-earth doped crystals have numerous applications ranging from frequency metrology to quantum information processing. To fully benefit from their exceptional coherence properties, the effect of mechanical strain on the energy levels of the dopants - whether it is a resource or perturbation - needs to be considered. We demonstrate that by applying uniaxial stress to a rare-earth doped crystal containing a spectral hole, we can shift the hole by a controlled amount that is larger than the width of the hole. We deduce the sensitivity of $rm Eu^{3+}$ ions in an $rm Y_2SiO_5$ matrix as a function of crystal site and the crystalline axis along which the stress is applied.