In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is being intensely pursued. Especially, how to control the switching current density, which is expected to enrich device functionalities, has aroused much interest among researchers all over the world. In this paper, a novel method to adjust the switching current is proposed, and the BiFeO3 (BFO) based heterostructures with opposite spontaneous polarizations fields show huge changes in both perpendicular magnetic anisotropy and the SOT-induced magnetization switching. The damping-like torques were estimated by using harmonic Hall voltage measurement, and the variation of effective spin Hall angles for the heterostructures with opposite polarizations was calculated to be 272%. At the end of this paper, we have also demonstrated the possible applications of our structure in memory and reconfigurable logic devices.
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