A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors

The elegant simplicity of the device concept and the urgent need for a new transistor at the twilight of Moores law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance field effect transistor (NC-FET). Although hundreds of papers have been published, the validity of quasi-static NC and the frequency-reliability limits of NC-FET are still being debated. The concept of NC - if conclusively demonstrated - will have broad impacts on device physics and technology development. Here, the authors provide a critical review of recent progress on NC-FETs research and some starting points for a coherent discussion.