Although nanoscale deformation, such as nanostrain in iron chalcogenide (FeSexTe1-x, FST) thin films, has attracted attention owing to the enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, its formation has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside FST matrix using sequential pulsed laser deposition. Using transmission electron microscopy and geometrical phase analysis, we verified that a trace amount of CeO2 injection forms nanoscale fine defects with a nanostrained region, which has a tensile strain (ezz ~ 0.02) along the c-axis of the FST matrix. The nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 for a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to a pristine FST thin film.
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