We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
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