We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500~K. Measurements of the noise spectrum reveal a $1/f^{alphaapprox1}$-dependence and a small decrease in $alpha$ between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally-activated two-level fluctuators with activation energies between 0.35~eV and 0.65~eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example defect motion in the solid state and surface adsorbate binding energies. Studying these processes may aid in identifying the origin of excess electric-field noise in ion traps -- a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.
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