The single layer of Zirconium pentatelluride (ZrTe5) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in the topological phase transitions and potential device application. Here we investigated the transport properties in ZrTe5 films with the dependence of thickness from a few nm to several hundred nm. We find that the temperature of the resistivity anomalys peak (Tp) is inclining to increase as the thickness decreases, and around a critical thickness of ~40 nm, the dominating carriers in the films change from n-type to p-type. With comprehensive studying of the Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures, we demonstrate the multi-carrier transport instinct in the thin films. We extract the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berrys phase {pi}, while the hole carriers may originate from the surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate ZrTe5 film in the inert or vacuum environment to make a substantial improvement in the device quality.
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