An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal to background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 microns, to detect the lowest energetic ions to 20 microns for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented
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