We examine generation dynamics of coherent phonons (CPs) in both of polar and non-polar semiconductors -- such as GaAs and Si -- based on a polaronic-quasiparticle (PQ) model. In the model concerned, the PQ operator is composed of two kinds of operators. One is a quasiboson operator -- defined as a linear combination of a set of pairs of electron operators -- and the other is a longitudinal optical (LO) phonon operator. The problem of transient and non-linear Fano resonance (FR) is tackled in particular; the vestige of this quantum interference effect was observed exclusively in lightly $n$-doped Si immediately after carriers were excited by an ultrashort pulse-laser [M. Hase et. al., Nature 426, 51 (2003)], though not observed yet in GaAs. It is shown that the phonon energy state is embedded in a continuum state formed by a set of adiabatic eigenstates of the quasiboson. This result implies the possibility of manifestation of the transient FR in the present optically-non-linear system.
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