We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the simplest manifestation of Ruderman-Kittel-Kasuya-Yosida exchange, and can be manipulated through gate voltage control of level splittings and tunneling amplitudes within the system. This provides both a high degree of tuneability and a means for realizing high-fidelity two-qubit gates between spatially separated spins, yielding an experimentally accessible method of coupling donor electron spins in silicon via a hybrid impurity-dot system.
تحميل البحث