First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while down-spin ones to the negative field surface, arising from the redistribution of Fe-t2g orbital. The half-metallic behavior of Fe-3d states in the surface of R phase film makes it a promising candidate for AFM/FM bilayer heterostructure possessing electric-field tunable FM magnetization reversal and opens a new way towards designing spintronic multiferroics. The interface exchange-bias effect in this BFO/FM bilayer is mainly driven by the Fe-t2g orbital reconstruction, as well as spin transferring and rearrangement.
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