Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 {mu}V/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity ({kappa}(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 {mu}V/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.
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