This paper presents the design and fabrication of batch-processed cantilever probes with electrical shielding for scanning microwave impedance microscopy. The diameter of the tip apex, which defines the electrical resolution, is less than 50 nm. The width of the stripline and the thicknesses of the insulation dielectrics are optimized for a small series resistance (< 5 W) and a small background capacitance (~ 1 pF), both critical for high sensitivity imaging on various samples. The coaxial shielding ensures that only the probe tip interacts with the sample. The structure of the cantilever is designed to be symmetric to balance the stresses and thermal expansions of different layers so that the cantilever remains straight under variable temperatures. Such shielded cantilever probes produced in the wafer scale will facilitate enormous applications on nanoscale dielectric and conductivity imaging.