By the application of a small oscillating magnetic field parallel to the main magnetic field and perpendicular to the transport current, we were able to generate a voltage dip in the I-V curves of Nb$_3$Sn similar to the peak-effect pattern observed in earlier resistivity measurements. The pattern was history dependent and exhibited a memory effect. In addition we observed in the I-V curves for a high shaking-field amplitude a step feature of unknown origin.
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