We investigate the electron localization in double concentric quantum rings (DCQRs) when a perpendicular magnetic field is applied. In weakly coupled DCQRs, the situation can occur when the single electron energy levels associated with different rings may be crossed. To avoid degeneracy, the anti-crossing of these levels has a place. We show that in this DCQR the electron spatial transition between the rings occurs due to the electron level anti-crossing. The anti-crossing of the levels with different radial quantum numbers provides the conditions for electron tunneling between rings. To study electronic structure of the semiconductor DCQR, the single sub-band effective mass approach with energy dependence was used. Results of numerical simulation for the electron transition are presented for DCQRs of geometry related to one fabricated in experiment.
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