Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design


الملخص بالإنكليزية

The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.

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