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Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high detector performance, device physics, however, places a fundamental limit of the achievable detector sensitivity, such as responsivity and gain, when simultaneously aimed to increasing the detectors temporal response, speed, known as the gain-bandwidth product (GBP). While detectors GBP has been increasing in recent years, the average GBP is still relatively modest (~10^6-10^7 Hz-A/W). Here we discuss photodetector performance limits and opportunities based on arguments from scaling length theory relating photocarrier channel length, mobility, electrical resistance with optical waveguide mode constrains. We show that short-channel detectors are synergistic with slot-waveguide approaches, and when combined, offer a high-degree of detector design synergy especially for the class of nanometer-thin materials. Indeed, we find that two dimensional material-based detectors are not limited by their low mobility and can, in principle, allow for 100 GHz fast response rates. However, contact resistance is still a challenge for such thin materials, a research topic that is still not addressed yet. An interim solution is to utilize heterojunction approaches for functionality separation. Nonetheless, atomistically- and nanometer-thin materials used in such next-generation scaling length theory based detectors also demand high material quality and monolithic integration strategies into photonic circuits including foundry-near processes. As it stands, this letter aims to guide the community if achieving the next generation photodetectors aiming for a performance target of GBP = 10^12 Hz-A/W.
We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external respo
Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene
We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid
This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device shows a non