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The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{rm 2-x}$Mn$_{rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The investigated high quality single crystals of Bi$_{rm 2-x}$Mn$_{rm x}$Te$_3$ show a ferromagnetic phase transition for $xgeq 0.04$ at $T_{C}approx 12$ K. The Hall measurements reveal a p-type finite charge-carrier density. Measurements of the temperature dependence of the ESR signal of Mn dopants for different orientations of the external magnetic field give evidence that the localized Mn moments interact with the mobile charge carriers leading to a Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling between the Mn spins of order 2-3 meV. Furthermore, ESR reveals a low-dimensional character of magnetic correlations that persist far above the ferromagnetic ordering temperature.
The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution o
Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te
We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify t
Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied examples here. H
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivi