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The electronic valence state of Mn in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures is probed by near edge x-ray absorption spectroscopy as a function of the ferroelectric polarization. We observe a temperature independent shift in the absorption edge of Mn associated with a change in valency induced by charge carrier modulation in the La0.8Sr0.2MnO3, demonstrating the electronic origin of the magnetoelectric effect. Spectroscopic, magnetic, and electric characterization shows that the large magnetoelectric response originates from a modified interfacial spin configuration, opening a new pathway to the electronic control of spin in complex oxide materials.
In this article the mechanism of the linear magnetoelectric (ME) effect in the rhombohedral multiferroic BiFeO$_3$ is considered. The study is based on the symmetry approach of the GinzburgLandau type, in which polarization, antiferrodistortion, and
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which
We theoretically study magnetoelectric effects in a heterostructure of a generic band insulator and a ferromagnet. In contrast to the kinetic magnetoelectric effect in metals, referred to as the Edelstein effect or the inverse spin galvanic effect, o
Pb(Fe$_{0.5}$Nb$_{0.5}$)O$_3$ (PFN), one of the few relaxor multiferroic systems, has a $G$-type antiferromagnetic transition at $T_N$ = 143 K and a ferroelectric transition at $T_C$ = 385 K. By using high-resolution neutron-diffraction experiments a
Magnetic, dielectric and calorimetric studies on 0.9BiFeO3-0.1BaTiO3 indicate strong magnetoelectric coupling. XRD studies reveal a very remarkable change in the rhombohedral distortion angle and a significant shift in the atomic positions at the mag