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We present the resistively-determined upper critical field H^{rho}_{c2}(T) and the irreversibility lines H^{rho}_{irr}(T) of various high-T_c cuprates, deduced from measurements in 61-T pulsed magnetic fields applied parallel to the c-axis. The SHAPE of both H^{rho}_{c2}(T) and H^{rho}_{irr}(T) depends monotonically on the anisotropy of the material and none of the samples show saturation of H^{rho}(T) at low temperatures. The anomalous positive curvature, d^2 H^{rho}/dT^2 > 0, is the strongest in materials with the largest normal-state anisotropy, regardless of whether anisotropy is varied by changing the carrier concentration or by comparing a variety of optimally-doped compounds.
We report resistivity and upper critical field B_c2(T) data for disordered (As deficient) LaO_0.9F_0.1FeAs_1-delta in a wide temperature and high field range up to 60 T. These samples exhibit a slightly enhanced superconducting transition at T_c = 28
We present a detailed study of the electrical transport properties of YBa2Cu3O7-{delta} thin film. The irreversibility fields ({mu}_0 H_irr), upper critical fields ({mu}_0 H_C2), penetration depths ({lambda}) and coherence lengths ({xi} ) of the YBa2
The density-of-states at the Fermi energy, $N(E_F)$, is low in doped superconducting semiconductors and high-$T_C$ cuprates. This contrasts with the common view that superconductivity requires a large electron-boson coupling $lambda$ and therefore al
A possibility of holon (boson) pair condensation is explored for hole doped high T_c cuprates, by using the U(1) slave-boson representation of the t-J Hamiltonian with the inclusion of hole-hole repulsion. A phase diagram of the hole doped high T_c c
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values h