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A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
Local ultrafast optical excitation of electron-hole pairs in disordered semiconductors provides the possibility to observe experimentally interaction-assisted propagation of correlated quantum particles in a disordered environment. In addition to the
The dynamics of optically generated electron-hole pairs is investigated in a disordered semiconductor nanowire. The particle pairs are generated by short laser pulses and their dynamics is followed using the Heisenberg equation of motion. Is is shown
We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of the Kohn-S
Mean-field theory of non-interacting disordered electron systems is widely and successfully used to describe equilibrium properties of alloys in the whole range of disorder strengths. It, however, fails to take into account effects of quantum coheren
Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs